类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | FDS6982 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 6.3A 8.6A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 逻辑电平兼容 | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 N-Channel (Dual) | SWITCHING | 28m Ω @ 6.3A, 10V | 3V @ 250μA | 760pF @ 10V | 12nC @ 5V | 30V | 6.3A | 0.028Ohm | 20A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDQ7238AS | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | YES | SILICON | 14A 11A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 11 | 哑光锡 | 鸥翼 | 260 | unknown | 30 | 14/11 | R-PDSO-G11 | COMMERCIAL | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.3W 1.1W | 2 N-Channel (Dual) | SWITCHING | 13.2m Ω @ 11A, 10V | 3V @ 250μA | 920pF @ 15V | 24nC @ 10V | 30V | 11A | 0.0132Ohm | 50A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FDW2510NZ | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 6.4A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 未说明 | unknown | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.1W | 2 N-Channel (Dual) | SWITCHING | 24m Ω @ 6.4A, 4.5V | 1.5V @ 250μA | 870pF @ 10V | 12nC @ 4.5V | 20V | 6.4A | 0.024Ohm | 30A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FDS8934A | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 4A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | 2 P-Channel (Dual) | SWITCHING | 55m Ω @ 4A, 4.5V | 1V @ 250μA | 1130pF @ 10V | 28nC @ 5V | 20V | 4A | 0.065Ohm | 20A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDS4885C | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 7.5A 6A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | 哑光锡 | DUAL | 鸥翼 | 260 | 未说明 | 8 | R-PDSO-G8 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 900mW | N and P-Channel | SWITCHING | 22m Ω @ 7.5A, 10V | 5V @ 250μA | 900pF @ 20V | 21nC @ 10V | 40V | N-CHANNEL AND P-CHANNEL | 7.5A | 0.022Ohm | 20A | 40V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FDW2504P | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | SILICON | 3.8A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | TIN | 8541.29.00.95 | 鸥翼 | 260 | unknown | 未说明 | 8 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 600mW | 2 P-Channel (Dual) | SWITCHING | 43m Ω @ 3.8A, 4.5V | 1.5V @ 250μA | 1030pF @ 10V | 16nC @ 4.5V | 20V | MO-153AA | 3.8A | 0.043Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
![]() | FDM3300NZ | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-PowerVDFN | YES | SILICON | 10A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | yes | Obsolete | 1 (Unlimited) | 5 | 未说明 | FLAT | 未说明 | unknown | 未说明 | 8 | R-PDSO-F5 | COMMERCIAL | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 900mW | 2 N-Channel (Dual) | SWITCHING | 23m Ω @ 10A, 4.5V | 1.5V @ 250μA | 1610pF @ 10V | 17nC @ 4.5V | 20V | 10A | 0.023Ohm | 40A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | NDM3000 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | YES | SILICON | 3A | 6 | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | Obsolete | 1 (Unlimited) | 16 | 哑光锡 | DUAL | 鸥翼 | 260 | unknown | 未说明 | 16 | R-PDSO-G16 | COMMERCIAL | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 1.4W | 3 N and 3 P-Channel (3-Phase Bridge) | SWITCHING | 90m Ω @ 3A, 10V | 3V @ 250μA | 360pF @ 10V | 25nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 3A | 0.16Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | FD6M045N06 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | EPM15 | NO | SILICON | 60A | 2 | -40°C~150°C TJ | Tube | Power-SPM™ | Obsolete | 1 (Unlimited) | 15 | ZIG-ZAG | unknown | 15 | R-PZIP-T15 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | 2 N-Channel (Dual) | SWITCHING | 4.5m Ω @ 40A, 10V | 4V @ 250μA | 3890pF @ 25V | 87nC @ 10V | 60V | 60A | 0.0045Ohm | 60V | 794 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FD6M043N08 | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | EPM15 | NO | SILICON | 65A | 2 | -40°C~150°C TJ | Tube | Power-SPM™ | Obsolete | 1 (Unlimited) | 15 | ZIG-ZAG | unknown | 15 | R-PZIP-T15 | COMMERCIAL | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | 2 N-Channel (Dual) | SWITCHING | 4.3m Ω @ 40A, 10V | 4V @ 250μA | 6180pF @ 25V | 148nC @ 10V | 75V | 65A | 0.0043Ohm | 75V | 681 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | APTM50AM38STG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Chassis Mount, Screw | 底座安装 | SP4 | 4 | SILICON | 2 | 87 ns | -40°C~150°C TJ | Bulk | e1 | yes | 活跃 | 1 (Unlimited) | 10 | EAR99 | 锡银铜 | 雪崩能源评级 | 694W | UPPER | UNSPECIFIED | 10 | R-XUFM-X10 | 增强型MOSFET | 694W | ISOLATED | 18 ns | 2 N-Channel (Half Bridge) | SWITCHING | 45m Ω @ 45A, 10V | 5V @ 5mA | 11200pF @ 25V | 246nC @ 10V | 35ns | 500V | 77 ns | 90A | 30V | 360A | 500V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||
![]() | APTM50AM24SG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Chassis Mount, Screw | 底座安装 | SP6 | 7 | SILICON | 2 | 50 ns | -40°C~150°C TJ | Bulk | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 1.25kW | UPPER | UNSPECIFIED | 增强型MOSFET | 1.25kW | ISOLATED | 10 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 28m Ω @ 75A, 10V | 5V @ 6mA | 19600pF @ 25V | 434nC @ 10V | 17ns | 500V | 41 ns | 150A | 30V | 600A | 500V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||
NVMFD5C668NLT1G | ON Semiconductor | 数据表 | 55630 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 48 Weeks | 表面贴装 | 8-PowerTDFN | 15.5A Ta 68A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2018 | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | not_compliant | 3W Ta 57.5W Tc | 2 N-Channel (Dual) | 6.5m Ω @ 20A, 10V | 2V @ 50μA | 1440pF @ 25V | 21.3nC @ 10V | 60V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | APTM100H45SCTG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 22 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 底座安装 | SP4 | 4 | SILICON | 4 | 121 ns | -40°C~150°C TJ | Bulk | 1997 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 14 | EAR99 | 锡银铜 | 雪崩 额定 | 357W | UPPER | UNSPECIFIED | 未说明 | 未说明 | 14 | 不合格 | 增强型MOSFET | 357W | ISOLATED | 10 ns | 4 N-Channel (H-Bridge) | SWITCHING | 540m Ω @ 9A, 10V | 5V @ 2.5mA | 4350pF @ 25V | 154nC @ 10V | 12ns | 1000V 1kV | 35 ns | 18A | 30V | 72A | 1000V | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||
![]() | APTM120H29FG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 36 Weeks | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 4 | 160 ns | -40°C~150°C TJ | Bulk | 2012 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | 锡银铜 | 雪崩 额定 | 780W | UPPER | UNSPECIFIED | 12 | R-XUFM-X12 | 增强型MOSFET | 780W | ISOLATED | 20 ns | 4 N-Channel (H-Bridge) | SWITCHING | 348m Ω @ 17A, 10V | 5V @ 5mA | 10300pF @ 25V | 374nC @ 10V | 15ns | 1200V 1.2kV | 45 ns | 34A | 30V | 1200V | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||
![]() | APTM100A13SCG | Microsemi Corporation | 数据表 | 896 In Stock | - | 最小起订量: 1 最小包装量: 1 | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 底座安装 | SP6 | 6 | SILICON | 2 | 50 ns | -40°C~150°C TJ | Bulk | e1 | yes | 活跃 | 1 (Unlimited) | 7 | EAR99 | 锡银铜 | 雪崩 额定 | 1.25kW | UPPER | UNSPECIFIED | 未说明 | 未说明 | 7 | R-XUFM-X7 | 不合格 | 增强型MOSFET | 1.25kW | ISOLATED | 9 ns | 1250W | 2 N-Channel (Half Bridge) | SWITCHING | 156m Ω @ 32.5A, 10V | 5V @ 6mA | 15200pF @ 25V | 562nC @ 10V | 1000V 1kV | 24 ns | 65A | 30V | 1000V | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||
![]() | IRF8910PBF | Infineon Technologies | 数据表 | 372 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 10A | 2 | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 鸥翼 | 未说明 | 未说明 | IRF8910PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 13.4m Ω @ 10A, 10V | 2.55V @ 250μA | 960pF @ 10V | 11nC @ 4.5V | 20V | MS-012AA | 10A | 0.0134Ohm | 82A | 20V | 19 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7380PBF | Infineon Technologies | 数据表 | 39 In Stock | - | 最小起订量: 1 最小包装量: 1 | 22 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 3.6A | -55°C~150°C TJ | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | IRF7380PBF | 2W | 2 N-Channel (Dual) | 73m Ω @ 2.2A, 10V | 4V @ 250μA | 660pF @ 25V | 23nC @ 10V | 80V | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSO615NGHUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 26 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | SIPMOS® | e3 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 60V | 鸥翼 | 2.6A | BSO615 | 8 | 增强型MOSFET | 2W | 2 N-Channel (Dual) | 150m Ω @ 2.6A, 4.5V | 2V @ 20μA | 不含卤素 | 380pF @ 25V | 20nC @ 10V | 15ns | 2.6A | 20V | 60V | 0.15Ohm | 10.4A | 60 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||
![]() | AUIRF7319QTR | Infineon Technologies | 数据表 | 360000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 26 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 6.5A 4.9A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 2W | 鸥翼 | Dual | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 29m Ω @ 5.8A, 10V | 3V @ 250μA | 650pF @ 25V | 33nC @ 10V | N-CHANNEL AND P-CHANNEL | 4.9A | 1V | 20V | 6.5A | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
SMA5112 | Sanken | 数据表 | 1080 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 通孔 | 通孔 | 12-SIP | SILICON | 6 | 150°C TJ | Tube | 2001 | yes | 活跃 | 1 (Unlimited) | 12 | EAR99 | 8541.29.00.95 | 35W | SINGLE | 未说明 | 未说明 | 12 | R-PSIP-T12 | 不合格 | COMPLEX | 增强型MOSFET | 4W | 6 N-Channel (3-Phase Bridge) | SWITCHING | 500m Ω @ 3.5A, 10V | 4V @ 1mA | 450pF @ 10V | 250V | 7A | 7A | 0.5Ohm | 15A | 250V | 55 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||
EMH2407-S-TL-HX | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | 3 μs | Tape & Reel (TR) | 2016 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 310 ns | 1.02μs | 2.25 μs | 6A | 12V | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMP2101UCB9-7 | Diodes Incorporated | 数据表 | 40000 In Stock | - | 最小起订量: 1 最小包装量: 1 | Tape & Reel (TR) | e1 | 活跃 | 1 (Unlimited) | Tin/Silver/Copper (Sn/Ag/Cu) | 未说明 | 未说明 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TSM6502CR RLG | Taiwan Semiconductor Corporation | 数据表 | 5557 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 8-PowerTDFN | 24A Tc 18A Tc | -55°C~150°C TJ | Digi-Reel® | 2017 | 活跃 | 1 (Unlimited) | 未说明 | 未说明 | 40W | N and P-Channel | 34m Ω @ 5.4A, 10V, 68m Ω @ 4A, 10V | 2.5V @ 250μA | 1159pF @ 30V 930pF @ 30V | 10.3nC @ 4.5V, 9.5nC @ 4.5V | 60V | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110800ASCL | Advanced Linear Devices Inc. | 数据表 | 67 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | 16 | 16-SOIC | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD®, Zero Threshold™ | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | 500mW | 500mW | 4 N-Channel, Matched Pair | 500Ohm @ 4V | 10mV @ 1μA | 2.5pF @ 5V | 10.6V | 12mA | 10.6V | 10V | 2.5pF | Standard | 500Ohm | 500 Ω | ROHS3 Compliant |
FDS6982
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDQ7238AS
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDW2510NZ
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDS8934A
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDS4885C
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDW2504P
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FDM3300NZ
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
NDM3000
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FD6M045N06
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
FD6M043N08
Rochester Electronics, LLC
分类:Transistors - FETs, MOSFETs - Arrays
APTM50AM38STG
Microsemi Corporation
分类:Transistors - FETs, MOSFETs - Arrays
APTM50AM24SG
Microsemi Corporation
分类:Transistors - FETs, MOSFETs - Arrays
NVMFD5C668NLT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
26.463700
APTM100H45SCTG
Microsemi Corporation
分类:Transistors - FETs, MOSFETs - Arrays
APTM120H29FG
Microsemi Corporation
分类:Transistors - FETs, MOSFETs - Arrays
APTM100A13SCG
Microsemi Corporation
分类:Transistors - FETs, MOSFETs - Arrays
IRF8910PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7380PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
BSO615NGHUMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
AUIRF7319QTR
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
SMA5112
Sanken
分类:Transistors - FETs, MOSFETs - Arrays
EMH2407-S-TL-HX
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMP2101UCB9-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
TSM6502CR RLG
Taiwan Semiconductor Corporation
分类:Transistors - FETs, MOSFETs - Arrays
11.864323
ALD110800ASCL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
68.363877
